Comment on 'SiGe intermixing in Ge/Si(100) islands' Appl. Phys. Lett. 78, 303 (2001)

摘要

In their recent letter, Capellini, De Seta, and Evangelisti have performed an important and timely quantitative experimental analysis of Ge intermixing with Si(001) at growth temperatures T between 500 and 850℃. At 850℃, the Si content of the film is 72 at. . Intermixing to this extent is surprising if one considers a solid-on-solid growth process. It is our purpose to show here that at the highest growth temperature the data of Capellini and co-workers are in quantitative agreement with a prior calculation which considered the lowering of the film melting point induced by epitaxial stress. The lowering of the melting points of bulk Si and Ge by hundreds of ℃ as a function of hydrostatic pressure is well established.