Investigation of highhyphen;temperature annealing and quenching effects on Alhyphen;nSi diodes byChyphen;VandIhyphen;Vmeasurements

摘要

The behavior of Alhyphen;nSi diodes heat treatment above the eutectic temperature (600thinsp;deg;C) is studied by varying the annealing time and cooling rate. We have used the capacitancehyphen;voltage characteristic as a measure of the influence of the doping density and thickness of the recrystallized silicon layer at the interface. Poissonrsquo;s equation is solved to obtain theChyphen;Vcharacteristic and to relate it to the effective barrier height. We find that the barrier height is independent of the annealing time, but it is a function of the cooling rate. It appears that the diffusion of aluminum into silicon does not play a significant role, but fast quenching tends to prevent aluminum from precipitation, so that the recrystallized silicon layer is highly doped.