The role of the splithyphen;off band in electronhyphen;hole energy exchange dynamics in selected IIIhyphen;V semiconductors

摘要

We report a Montehyphen;Carlo investigation of Coulomb electronhyphen;hole scattering processes involving the splithyphen;off band in selected IIIhyphen;V semiconductors in the context of steadyhyphen;state highhyphen;field minorityhyphen;electron transport. Due to the small value of the relevant hole overlap factors, as well as the relative values of the Ggr;hyphen;Lenergy separation and the splithyphen;off energy, such processes do not make a significant contribution to the minority electron energy loss rate in In0.53Ga0.47As. In InP, however, the Ggr;hGgr;sprocess accounts for a significant fraction of the total Ggr;hyphen;electron energy loss to holes.