Power absorption during deposition of polycrystallinehyphen;silicon in a lamphyphen;heated chemicalhyphen;vaporhyphen;deposition reactor

摘要

A thermocouplehyphen;instrumented wafer was used to monitor the wafer temperature during chemical vapor deposition of a polycrystallinehyphen;silicon layer in a lamphyphen;heated rapid thermal processor. The temperature of the oxidized silicon substrate varies by more than 100thinsp;deg;C as the polycrystallinehyphen;silicon layer is deposited because the reflectivity of the sample changes with increasing thickness of the deposited layer. Crosshyphen;section transmission electron microscopy shows that when the temperature decreases below the polycrystallinehyphen;tohyphen;amorphous transition temperature during deposition, a phase change occurs in the structure of the deposited film. The change in temperature qualitatively corresponds to the change in reflectivity as a function of silicon film thickness calculated from a simple model.