Oxide current relaxation spectroscopy in tunneling metalhyphen;oxidehyphen;semiconductor structures under high field stresses

摘要

A new technique, oxide current relaxation spectroscopy, has been presented for observing various traps and/or charges in the thin oxide. This technique is based on electronhyphen;fluencehyphen;dependent current characteristics in tunneling metalhyphen;oxidehyphen;semiconductor structures under high field stresses. It is capable of showing the spectrum of traps and/or charges in the thinhyphen;gate SiO2as positive and negative peaks on an axis as a function of electron fluence. The height and position of each spectrum peak are related to the density, centroid, and capture cross section of the corresponding kind of the traps and/or charges. The parameters of various traps and/or charges in the thin SiO2have been measured. The experimental results are consistent with theoretical calculations.