Hot phonon effects in silicon fieldhyphen;effect transistors

摘要

An electron temperature model is used to estimate conditions for the onset of hot phonon effects in thenchannel of a silicon fieldhyphen;effect transistor. The required power density for an appreciable hot phonon effect on the drift velocity increases with electron temperature in the range of interest. At an electron temperature of 7200 K, with 300hyphen;K lattice temperature, it is found to be in the range 3times;1030ndash;3times;1031eV/sthinsp;cm3.