Photoluminescence of GaAs doped with dimethylaluminum methoxide during organometallic vapor phase epitaxy

摘要

Photoluminescence (PL) measurements of GaAs doped with dimethylaluminum methoxide during organometallic vapor phase epitaxy are reported. The nearhyphen;bandhyphen;edge luminescence intensity decreases by at least a factor of 104at low growth temperatures, which correlates well with the incorporation of oxygen. Concomitantly, several new PL peaks appeared at 72, 97, 150, 410, and 510 meV below the band edge. Based on the dependence of PL peak position on excitation power density, these bands have been interpreted as due to donorhyphen;acceptor type transitions involving deep oxygenhyphen;related levels. The intensity of nearhyphen;bandhyphen;edge emission was not affected by the annealing of doped layers at 800thinsp;deg;C under arsenic overpressure, which indicates that the dopinghyphen;induced deep centers are thermally stable.