The electron affinity of oxide semiconductors (In2O3,SnO2, etc.) is a topic of current interest. These materials are capable of forming barrier devices on a number of semiconductors which exhibit good photovoltaic conversion efficiency. We will show that simple methods based on the electrical measurements of oxidehyphen;semiconductor/basehyphen;semiconductor systems often lead to incorrect results, due to the uncertainty in the Fermihyphen;level position in the oxidehyphen;semiconductors and other interface parameters. To determine the true potential of a particular oxidehyphen;semiconductor, other methods should be used to find the electron affinity.
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