机译:6H-SiC的光电化学表征
Univ Utrecht, Debye Res Inst, Dept Condensed Matter, POB 80000, NL-3508 TA Utrecht, Netherlands.;
Porous silicon-carbide; Semiconductor electrodes; Surface recombination; Diffusion length; P-gap; Impedance; Interface; Spectroscopy; Anodization; Light;