Quantum limit of a narrowhyphen;channel GaAs metalhyphen;semiconductor fieldhyphen;effect transistor

摘要

The operation of a special GaAs metalhyphen;semiconductor fieldhyphen;effect transistor (MESFET), originally proposed by Pepper for studies of lowhyphen;dimensional transport at low temperatures, is analyzed in terms of a variational model designed for the quantum limit (narrow channel, low temperatures). The relation between electron concentration and gate voltage is calculated in the quantum limit and compared with the results of the classical abrupt depletion model. The quantum curves show no structure associated with sublevels and agree well with the predictions of the abrupt depletion model. Subband separations are derived and compared with experimental estimates.