Transmission electron microscopy study of diamond nucleation on 6Hhyphen;SiC single crystal with possibility of epitaxy

摘要

Diamond has been grown on 6Hhyphen;SiC single crystal wafers by microwave plasma assisted chemical vapor deposition with a negative bias pretreatment. A high nucleation density of diamond on the substrate has been achieved. Crosshyphen;sectional transmission electron microscopy was employed to study the interfacial microstructure of diamond on 6Hhyphen;SiC. Lattice image observations illustrate that diamond is directly formed on the 6Hhyphen;SiC substrate. The possibility of local epitaxial nucleation of diamond on the 6Hhyphen;SiC substrate and its crystallography are briefly discussed.