Influence of carrier flow on the temperaturehyphen;dependent capacitancehyphen;voltage profiles of heterojunction structures

摘要

We suggest a model which can explain the shifting of carrier concentration peaks in the temperaturehyphen;dependent capacitancehyphen;voltage carrier profiles of heterojunction (HJ) structures. The shift of concentration peaks, which was frequently observed in the inverted isotype HJs was previously attributed to the traps at the heterointerface. The main feature of our model is the role of band offset as a limiter to the test signal current. The model can explain the difference of the peak shift in the carrier profiles of the normal and inverted type HJs. According to this model, the peak shifts at low temperatures occur naturally for the inverted type HJs. copy;1996 American Institute of Physics.