Evidence of strong Auger recombination in semiconductorhyphen;doped glasses

摘要

Intracavity nearly degenerate fourhyphen;wave mixing has been used together with transmission measurements to evidence the important role played by Auger recombination in the relaxation rate of electronhyphen;hole pairs in semiconductorhyphen;doped glasses pumped by high laser intensities. Results show a shortening by a factor of 100 of the recombination carrier lifetime when the laser intensity is near damage threshold.