Active mode locking at 50 GHz repetition frequency by halfhyphen;frequency modulation of monolithic semiconductor lasers integrated with electroabsorption modulators

摘要

Active mode locking achieved at a 50 GHz repetition frequency by modulation at half (25 GHz) the cavity resonance frequency using a monolithic modehyphen;locked InGaAsP laser integrated with an electroabsorption modulator is described. A pulse width of around 3 ps and a high suppression ratio of more than 33 dB of the intensity modulation at the driving frequency are obtained. copy;1996 American Institute of Physics.