Phosphorus and boron doping effects on solid phase recrystallization of polycrystalline silicon films amorphized by germanium ion implantation

M.-Y.Kang; T.Yamamoto; T.MatsuiT.Kuwano

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Phosphorus and boron doping effects on solid phase recrystallization of polycrystalline silicon films amorphized by germanium ion implantation

机译：Phosphorus and boron doping effects on solid phase recrystallization of polycrystalline silicon films amorphized by germanium ion implantation

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来源
《Journal of Materials Science Letters》 |2004年第4期|343-344|共页
作者
M.-Y.Kang; T.Yamamoto; T.MatsuiT.Kuwano;
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Keio University;

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Phosphorus and boron doping effects on solid phase recrystallization of polycrystalline silicon films amorphized by germanium ion implantation

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