Anglehyphen;dependent laserhyphen;induced voltages in roomhyphen;temperature polycrystalline wafers of YBa2Cu3O7minus;x

摘要

Roomhyphen;temperature laserhyphen;induced voltages were observed in unsupported, polycrystalline wafers of YBa2Cu3O7minus;xin the absence of a transport current. Peak voltages of sim;1 V were detected in response to 40 mJ pulses of 532 nm light. The rise and fall times for the signals were detector limited. The half widths of the signals were instrument response limited (laser pulsed limited for a 10 ns laser pulse and digitizer limited for a 30 ps laser pulse). At fixed pulse energy, the induced peak voltage scales as the sine of the angle of incidence of the laser beam and is nulled at normal incidence. The magnitude of the signal as a function of sample thickness, preparation, and laser excitation wavelength is discussed.