Transition from selfhyphen;organized InSb quantumhyphen;dots to quantum dashes

摘要

We have grown selfhyphen;organized InSb quantum dots on semihyphen;insulating InP (001) substrates by molecular beam epitaxy. We studied the size dependency of the uncapped InSb quantum dots on the nominal thickness of the deposited InSb by atomic force microscopy. The dot sizes have a pronounced minimum at about 2.2 monolayers of InSb. After a nominal thickness of 3.2 monolayers we observe a drastic change of the dot shape, from quantum dots to quantum dashes. From there on the dots grow in a quasicylindric shape aligned in the (110) direction. copy;1996 American Institute of Physics.