For a variety of device applications, junction devices in particular, we have demonstrated a heterostructure system of Y1Ba2Cu3O7minus;y/Y1minus;xPrxBa2Cu3O7minus;ywhich maintains epitaxy over the entire Pr composition rangex=0ndash;1. We have grown both trilayer and multiperiod superlattices which show nearly single crystalline helium ion backscattering minimum yields of 6percnt; in the topmost layer. Xhyphen;ray diffraction measurements indicatechyphen;axis orientation by a transverse scan across (005) line with a full width at half maximum of 0.6deg; and 0.4deg; on MgO and SrTiO3substrates, respectively. Scanning Auger electron depth profiles and crosshyphen;sectional transmission electron micrographs indicate abrupt Pr/Y interfaces within one unit cell and virtually no disruption of the layered structure at the interface. These results indicate the potential for the growth of excellent heterostructures and superlattices of the highhyphen;temperature superconductors.
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