Luminescence quenching and the formation of the GaP1minus;xNxalloy in GaP with increasing nitrogen content

摘要

A study of the luminescence properties of epitaxial GaP containing atomic N grown by molecular beam epitaxy using NH3and PH3as the column V sources was conducted. The 77 K photoluminescence spectra of the Nhyphen;doped epitaxial GaP showed a continuous redshift, from 5691 Aring; (2.18 eV) to 6600 Aring; (1.88 eV), resulted when the N concentration exceeded sim;5ndash;7times;1019cmminus;3. This energy shift was found to be consistent with energy gap predictions using the dielectric theory of electronegativity for the GaP1minus;xNxsystem. The data also indicate that the emission intensity was maximum for Nsim;1times;1020cmminus;3, and then monotonically decreases with increasing N content. This is consistent with the formation of an indirect bandhyphen;gap semiconductor.