Growth and high-temperature electromechanical properties of Ca3NbX3Si2O14(X D Ga and Al) piezoelectric crystals

摘要

Piezoelectric single crystals of Ca3NbX3Si2O14 (CNXS, X D Ga and Al) with ordered langasite structurewere successfully grown using the Czochralski technique. The structure was analyzed by X-ray powderdiffraction, and the lattice parameters for CNAS were found to decrease slightly when compared to CNGS,due to the smaller ion radius of Al. The dielectric, piezoelectric and electromechanical properties werestudied as function of temperature from 30 C to 900 C, showing a stable temperature-dependentbehavior. Of particular significant is their high mechanical quality factor and electrical resistivity atelevated temperature, demonstrating CNXS crystals to be promising candidates for high-temperatureapplications.