We have examined pulse laserhyphen;irradiated lang;110rang; Al single crystals near the threshold energy for melting by ion channeling and electron microscopy. We find that slip deformation occurs at incident energies 3.5 J/cm2, where melting does not occur for our 20 nsec (full width at half maximum) pulse width, as well as at energies gsim;3.5J/cm2, where a nearhyphen;surface layer is melted. This slip deformation results in an increase in the channeling minimum yield khgr;min, which is attributed to smallhyphen;angle misalignments between slip planes across the surface. The abrupt increase in khgr;minwith melting suggests that channeling can provide a sensitive monitor of the threshold for melting.
展开▼
