Molecular beam epitaxy of AlSb

摘要

AlSb has been grown on (100)GaAs and GaSb by molecular beam epitaxy with good surface finish. High energy electron diffraction study reveals different interface morphologies between AlSb and GaAs, GaSb or InAs. Smooth interfaces are observed for AlSbhyphen;GaSb and AlSbhyphen;InAs while an initial stage of threehyphen;dimensional growth is observed for the AlSbhyphen;GaAs interface. Ge doping givesphyphen;type AlSb in the range of sim;1014ndash;1019cmminus;3under normal growth conditions.