Surfacehyphen;depletion effect correction to nonuniform carrier distributions by Hall measurements

摘要

Significant errors in the determination of carrier profiles obtained by the Hallhyphen;effect method result if the depletion effect at a semiconductor surface is not taken into account. A practical procedure for correcting the apparent measured carrier profiles for this surfacehyphen;depletion effect is described for nonuniformly doped semiconductors. This correction method is then applied to Sihyphen;implanted GaAs and the results are compared with those of capacitancehyphen;voltage measurements. The number of total trapped charges in freehyphen;surface states are estimated to be about 1times;1012cmminus;2.