The study of charge carrier kinetics in semiconductors by microwave conductivity measurements. II.

摘要

In previous work lsqb;J. Appl. Phys.60, 3558 (1986)rsqb; an introduction was given to the study of charge carrier kinetics in semiconductors by microwave conductivity measurements. This paper compares quantitatively our experimental results to theoretical calculations for singlehyphen;crystalline Si wafers, taking into account the dependence on the microwave frequency and the dark conductivity of the sample, which ranged from sgr;=0.2 to 400 OHgr;minus;1thinsp;mminus;1. In particular, difficulties arising from experimental conditions that cannot easily be treated by theory are discussed. It is shown that quantitative measurements of samples with low dark conductivity can be performed even in a very simple configuration, which permits determination of the sum of charge carrier mobilities.