Fabrication of AlGaN/GaN HEMTs with buried p-layers

摘要

We have demonstrated AlGaN/GaN HEMTs with lightly-doped buried p-layers under the channel for the first time. A 2-ttm-gate device showed good pinch-off characteristics, g{sub}m of 55 mS/mm, and breakdown voltage of 70-90 V. Carrier confinement by the p-n junction was confirmed by capacitance-voltage measurements. The maximum f{sub}T of 5.5 GHz was obtained. These results indicate the potential of p-layer insertion into GaN-based FETs.