Fabrication and characterization of deep mesa etched lsquo;lsquo;antirsquo;rsquo;hyphen;dot superlattices in GaAshyphen;AlGaAs heterostructures

摘要

By etching a periodic array of holes through a ;mobility twohyphen;dimensional electron gas we define highhyphen;a lateral, lsquo;lsquo;antirsquo;rsquo;hyphen;dothyphen;type superlattice with periodsa=200 anda=300 nm, much smaller than the electron mean free path in the unpatterned material. The devices are fabricated using electron beam lithography and reactive ion etching techniques, and characterized by magnetotransport experiments. Commensurability effects and the observed quenching of the Hall effect indicate that the electron gas between the etched holes essentially maintains its initial high electron mobility.