Nitrogen in silicon: Towards the identification of the 1.1223hyphen;eV (A,B,C) photoluminescence lines

摘要

We show that the lsquo;lsquo;newrsquo;rsquo; photoluminescence line in silicon at 1.1223 eV which was recently reported and ascribed to a nitrogen complex is identical with theAline of the isoelectronicA,B,Cexciton system as previously studied. New data are presented which confirm that nitrogen is incorporated in the optical center. Further defect constituents cannot be identified on the basis of the present data.