RAPID DETERMINATION OF A-SI-H GAP STATES BY DOUBLE-BEAM PHOTOCAPACITANCE

摘要

First, the admittance associated with the depletion region of Schottky diodes produced on phosphorus-doped a-Si:H films was analysed and characterized through capacitance (conductance) measurements as a function of d.c. bias, frequency of a.c. bias, and temperature. Then, the gap states within the depletion region were studied by double-beam photocapacitance spectroscopy, which is a sensitive and rapid survey technique. Two distributions of localized gap states were measured with average positions located at 0.75 eV and 0.95 eV respectively from the band edge. References: 36