To find an optimum initial GaAs surface for application of the silicon interface control layer (Si ICL)-based surface passivation method, Ga stabilized GaAs(001)-(4×6) initial surface was investigated before and after Si deposition by UHV-STM/STS, UHV-PL and UHV contactless C-V measurement. In the case of (4×6) surface, as compared with As stabilized surface, a large band-edge PL intensity was obtained. UHV contactless C-V measurements indicated low and wide Nss distributions, and its properties further improved after Si deposition. Microscopic STM observation was well consistent with macroscopic RHEED observation. Anomalous STS spectra were observed on initial surface before Si deposition, however, normal STS spectra were obtained after Si deposition. These results indicate that (4×6) surface is the most suitable surface for application of the Si ICL-based passivation process for GaAs.
展开▼
