Optically controlled absorption modulator based on state filling of InxGa1minus;xAs/GaAs quantum wells

摘要

We report the first demonstration of an optically controlled absorption modulator based on state filling in a periodically doped InxGa1minus;xAs/GaAs multiple quantum well structure. Differential absorption of approximately 104cmminus;1is observed in the quantum wells of our test structure at saturation pump powers. Photoluminescence and timehyphen;resolved modulation measurements confirm the predicted behavior of carrier recombination and give a measure of enhanced carrier lifetime of approximately 1 ms. These initial results show the potential for developing these structures into optically addressed spatial light modulators.