A study of the light generation efficiency of a series of InAs/AlAs_(0.16)Sb_(0.84) light emitting diodes with p-type InAs active layers is reported. The bulk low-injection radiative efficiency of the p-type material is shown to be as high as 24 at a hole concentration of 1.5×10~(17) cm~(-3) but to decrease with increasing hole concentration in a manner consistent with the dominant low-injection nonradiative processes being Auger processes with two holes in their initial states and a total rate constant of 2×10~(-28) cm~(6)s~(-1). The maximum internal low-drive quantum efficiency achieved in the light emitting diodes is shown to be limited by interface recombination at the InAs/AlAs_(0.16)Sb_(0.84) heterojunction and reabsorption in the active layer in addition to the bulk nonradiative processes in the InAs. A maximum value of ～9 is achieved.
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