The fabrication and performance characteristics of a InGaAsP laser structure with semihyphen;insulating current confining layers are reported. The semihyphen;insulating layers are Fehyphen;doped InP and are grown using the metalorganic chemical vapor deposition growth technique. The lasers have threshold currents in the range 20ndash;30 mA and external differential quantum efficiency sim;0.2 mW/mA/facet at 30thinsp;deg;C. The bandwidth for smallhyphen;signal response is sim;2 GHz which suggests that the laser structure is suitable for high bit rate lightwave transmission systems. Initial aging results yield an estimated operating lifetime of 10 years at 20thinsp;deg;C.
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