Spiral growth in epitaxial YBa2Cu3O7minus;xthin films produced by high deposition rate chemical vapor deposition

摘要

A technologically useful chemical vapor deposition process with high growth rate (gsim;4 mgr;m/h) was developed for the epitaxial growth of YBa2Cu3O7minus;x(YBCO) thin films. Even at the high growth rate used in this process, a spiral growth mechanism was observed and the films grown had electrical (Tc=92 K,Jcof 2times;106A/cm2at 77 K) and structural properties equal to films produced by physical vapor deposition.