Raman characterization of lattice-matched GaInAsN layers grown on GaAs (001) substrates

摘要

First systematic Raman scattering characterization for the nearly lattice-matched GaInAsN layers has been discussed to investigate the local structural changes as the In and the N compositions increase. It has been found that the formation of the spontaneously ordered clusters in the GaInNAs layers strongly depends on the In incorporation, and the degradation mechanism of the crystal quality of GaInAsN with the high In and N compositions may be completely different from the GaAsN systems. (C) 2002 Elsevier Science B.V. All rights reserved. References: 2