Electrical and optical evidence of resonant tunneling of holes in ann+in+doublehyphen;barrier diode structure under illumination

摘要

Using lowhyphen;temperature photocurrent, steadyhyphen;state and timehyphen;resolved photoluminescence, we have shown the importance of hole transport in the optical properties ofn+in+doublehyphen;barrier diodes under operation. We have also seen evidence of resonant tunneling of minority holes in such an illuminated doublehyphen;barrier diode.