Solid phase recrystallization in molecular beam deposited gallium arsenide

摘要

A series of experimental investigations on the solid phase recrystallization of molecular beam deposited gallium arsenide films on silicon dioxide/tantalum/nickel substrates has been performed. The activation energy for recrystallization is unexpectedly small (0.55 eV) in the temperature range 450ndash;600thinsp;deg;C. When a thin amorphous germanium layer was grown before gallium arsenide deposition, an enhanced grain growth of gallium arsenide occurs together with anomalous germanium diffusion into the gallium arsenide layer in a semieutectic phase reaction. An enhancement of grain growth has also been observed by the utilization of a graphoepitaxy substrate having inverted pyramidal relief.