Low threshold and high power output 1.5 mgr;m InGaAs/InGaAsP separate confinement multiple quantum well laser grown by chemical beam epitaxy

摘要

We have demonstrated the first successful preparation of InGaAs/InGaAsP multiple quantum well (MQW) lasers grown by chemical beam epitaxy. The broadhyphen;area threshold current densities of standard (not graded index) separate confinement heterostructure (SCH) MQW lasers were as low as 860 and sim;590 A/cm2for cavity lengths of 500 and 1500ndash;3500 mgr;m. Such values are similar to those obtained from MQW wafers employing the more advanced graded index SCH(GRINhyphen;SCH) grown by metalorganic vapor phase epitaxy. Buriedhyphen;heterostructure lasers also have similar threshold currents, i.e., 25ndash;40 mA for 300ndash;1500 long cavities. Pulsed and cw output power at 1.57 mgr;m as high as 216 and 140 mW were obtained from 1hyphen;mmhyphen;long buriedhyphen;heterostructure lasers having antireflection and high reflection coatings of sim;5percnt; and sim;85percnt;. The layer thickness uniformity is better than plusmn;1percnt; across a 2hyphen;in.hyphen;diam wafer.