Unpinned gallium oxide/GaAs interface by hydrogen and nitrogen surface plasma treatment

摘要

The Fermi level at the Ga oxide/GaAs interface has been unpinned by rf plasma cleaning the GaAs surface in H2and N2. Following plasma cleaning, a Ga oxide film is reactively electron beam deposited onto the substrate. Metalhyphen;oxidehyphen;semiconductor (MOS) capacitors fabricated on these structures show good highhyphen;frequency capacitancehyphen;voltage characteristics. This indicates that the density of interface states has been reduced to sim;1011eVminus;1thinsp;cmminus;2. The MOS capacitors are found to be stable in air after several months.