Optical characteristics of InP/InGaAs HBTs

摘要

This paper. shows the performance as a photodetector of InP/InGAs HBT operated with a base bias and forntside optical. injection through the emitter. InP/InGaAs HBT produced the high optical gain of about 16.2 where HBT is biased at V{sub}C= 1V, I{sub}B=20 μA with an input optical power of 2.4μW. And we examined that the optical gain of HBTs becomes larger when operating in 3-terminal configuration rather than 2-terminal with the floating base. The optical performance of InP/InGaAs HBT is an attractive to the PIN Photodetector for use in long wavelength optical receivers.