Solid phase epitaxial regrowth of ionhyphen;implanted amorphized InP

摘要

Solid phase epitaxial regrowth of implanted amorphous InP layers is shown to occur in the temperature range 230ndash;330thinsp;deg;C. It leads to defective monocrystalline layers. The kinetics of growth follow an activation law with activation energyEa=1.55 eVplusmn;0.2 eV. Roughening of the amorphous/crystalline interface occurs during growth. The dependence of interface roughening on crystal orientation is studied. In all cases, it is shown that the interface is degraded much faster than in GaAs. The comparison between the two compound semiconductors is based on chemical disorder in the amorphized layer.