1.5‐mgr;m GaInAsP planar buried heterostructure lasers grown using chemical‐beam‐epitaxial base structures

摘要

GaInAsP/InP double heterostructures grown by chemical‐beam epitaxy have been used in conjunction with liquid‐phase‐epitaxial regrowth to fabricate high‐performance buried heterostructure lasers operating at a wavelength of 1.5 mgr;m. These lasers show room‐temperature threshold currents as low as 12 mA, external quantum efficiencies as high as 0.2 mW/mA per facet, and, in general, linear output power up to ∼10 mW/facet. The 3‐dB bandwidth at optimal biasing is about 8 GHz and is believed to be limited by the heatsink stud. The relative intensity noise is low, <−150 dB/Hz at 1 GHz for bias currents from 50 mA to above 150 mA.