Semiconductor memories are highly vulnerable to adjacent doublebit errors for two reasons: 1) The bombard- ment of strongradioactive particles such as cosmic particles on DRAM chips and datait lines. 2) The coupling noise in re- Cent high density DRAM chipsdue to the wiring capacitance Between two adjacent data bit lines. Inaddition, byte errors Which result from entire chip failures are alsoa source of con- Cern. Under this situation, codes capable ofcorrecting adjacent Double bit errors and simultaneously detectingsingle byte errors Are suitable for application in semiconductormemory systems.
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