A research group headed by Prof. Niu Zhichuan from the State Key Laboratory for Semiconductor Superlattice and Microstructures affiliated to the CAS Institute of Semiconductors has succeeded in developing a GaAs-based long-wavelength laser device: InAs/ GaAs self-assembly quantum dot laser with a wavelength of 1.33 (am under continuous-wave operation mode at room temperature. Experts say this is the most important achievement in the field of GaAs-based near-infrared, long-wavelength materials and devices in China in recent years. It is known that in the near future the optical fiber communication network will be dominated by opto-electronic integrated devices in order to meet the increasing demands for higher-speed, more reliable and stable operation of data transferring and processing systems. The technology of optoelectronic integrated devices now becomes a hot topic in the world.
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