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Large band gap bowing of InxGa1-xN alloys

机译:Large band gap bowing of InxGa1-xN alloys

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摘要

Band gap measurements have been performed on strained InxGa1-xN epilayers with x less than or equal to 0.12. The experimental data indicate that the bowing of the band gap is much larger than commonly assumed. We have performed first-principles calculations for the band gap as a function of alloy composition and find that the bowing is strongly composition dependent. lit x=0.125 the calculated bowing parameter is b=3.5 eV, in good agreement with the experimental values. (C) 1998 American Institute of Physics. References: 18

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