Solid phase epitaxy of a Gehyphen;Si alloy on lsqb;111rsqb;thinsp;Si through a Pd2Si layer

摘要

Solid phase epitaxy of a Ge70Si30alloy on lsqb;111rsqb;Si substrates was achieved in the amorphous Ge/Pd2Si/lsqb;111rsqb;Si system. Upon annealing at temperatures above 600thinsp;deg;C,the Ge transported through the silicide layer and formed a Gehyphen;rich, Sihyphen;Ge epitaxial layer on top of the Si substrate. At the same time the Pd silicide layer exchanged positions with the Ge, leading to the final configuration of Pd2Si/Sihyphen;Ge/lsqb;111rsqb;Si. The crystallinity of Pd2Si had a major effect on the epitaxy of the Gehyphen;Si alloy. On lsqb;100rsqb;Si where the Pd2Si was polycrystalline, epitaxial Gehyphen;Si growth was not observed.