Highly oriented growth of n-type ZnO films on p-typesingle crystallien diamond films and fabrication of high-quality transparent ZnO/diamond hetrojunction

摘要

We present the results on the fabrication and characterization of high-qulity transparent heterojunction between n-type ZnO film and p-type diamond single crystalline film on the substrate of diamond bulk single crystal.The results indicated that the current density of the fabricated p-n junciton reaches 110 A/M~2 when the forward biasvoltage is 2.5 v,and the turn-on voltage value is about 0.75 V and agreement wiht the expected value.Moreover,a good rectification characteristic and transparent in the visible light range was obtained in the device.