Lowhyphen;loss singlehyphen;mode GaAs/AlGaAs optical waveguides grown by organometallic vapor phase epitaxy

摘要

We report the fabrication and the characterization of lowhyphen;loss, singlehyphen;mode GaAs/AlGaAs ridge waveguides. The waveguides were grown by organometallic vapor phase epitaxy and were characterized at 1.52 mgr;m wavelength. Their propagation losses were evaluated by measuring the finesse of the Fabryndash;Perot waveguide resonators formed by cleaving two opposite ends of these waveguides. Losses as low as 0.15 dB/cm were measured for singlehyphen;mode waveguides, which is the lowest value reported to date for singlehyphen;mode semiconductor waveguides. Such lowhyphen;loss waveguides should be useful in guidedhyphen;wave components for integrated optoelectronics.