首页> 外文期刊>applied physics letters >On the possibility of transistor action based on quantum interference phenomena
【24h】

On the possibility of transistor action based on quantum interference phenomena

机译:On the possibility of transistor action based on quantum interference phenomena

获取原文
       

摘要

A theoretical study of quantum interference phenomena in a Thyphen;shaped semiconductor structure is presented. Transmission and reflection coefficients are computed by use of a tighthyphen;binding Green function technique. As expected, the results resemble the wellhyphen;known solutions for the electromagnetic field in waveguides with the main difference that the penetration of the wave function of the electrons can be controlled by external voltages. We conclude that transistor action based on quantum interference should be observable in such structures, and we present general results for the functional dependences of the transmission coefficient which corresponds to a transconductance.

著录项

获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号