Nitrogen doping in AlGaP grown by metalorganic vapor phase epitaxy using ammonia

摘要

Doping characteristics of nitrogen in AlGaP grown by metalorganic vapor phase epitaxy have been investigated using ammonia as the nitrogen source. It was found that nitrogen could be successfully incorporated into AlGaP up to as much as 1times;1020/cm3assisted by the gas phase parasitic reaction between trimethylaluminum and ammonia, while nitrogen incorporation into GaP was difficult. Nitrogen incorporation was found to be dependent on several factors such as ammonia concentration, Al composition, V/III ratio, and growth temperature. Exciton recombination bound to isoelectronic nitrogen in AlGaP was observed for the first time by photoluminescence measurement.