Electron mobility and velocity in compensated GaAs

摘要

We present the results of a Monte Carlo calculation of the electron velocity and mobility, as well as mobility measurements in compensated GaAs. For appreciable compensation ratios, the peak velocity, negative differential mobility, and peakhyphen;tohyphen;valley velocity ratios are drastically reduced in comparison with those in uncompensated GaAs. This reduction makes the Gunn effect less likely to manifest itself in ionhyphen;implanted GaAs metalhyphen;semiconductor fieldhyphen;effect transistors and other GaAs devices where compensation is important.